2SD1912 datasheet by Inchange Semiconductor.
| Part number | 2SD1912 |
|---|---|
| Datasheet | 2SD1912_InchangeSemiconductor.pdf |
| File Size | 217.05 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1912 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1918 | Silicon NPN Power Transistor |
| 2SD1928 | Power Transistor |
| 2SD1932 | Power Transistor |
| 2SD1980 | Silicon NPN Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
