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2SD1912 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Wide Area of Safe Operation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS Designed for low frequency

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1.75 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.