Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- Wide Area of Safe Operation
- Low Collector Saturation Voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
INCHANGE Semiconductor
APPLICATIONS
- Designed for low frequency power amplifier...
