Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Good Linearity of hFE
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
- plement to Type 2SB1353
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in high voltage driver...
