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2SD2033 - Silicon NPN Power Transistor

General Description

Good Linearity of hFE Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Complement to Type 2SB1353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in high voltage driver applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type 2SB1353 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 1.8 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2033 isc website：www.iscsemi.