2SD2095 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A;.