2SD2562 - Silicon NPN Darlington Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	2SD2562
Manufacturer	Inchange Semiconductor
File Size	222.92 KB
Description	Silicon NPN Darlington Power Transistor
Datasheet	2SD2562 Datasheet
Additional preview pages of the 2SD2562 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) Complement to Type 2SB1649 Minimum Lot-to-Lot variations for robust device per

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Published: Dec 9, 2010 |