2SD2562 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-.
| Part number | 2SD2562 |
|---|---|
| Datasheet | 2SD2562_InchangeSemiconductor.pdf |
| File Size | 222.92 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD2562 | Silicon NPN Transistor | Sanken |
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