Part 2SD2642
Description Silicon NPN Darlington Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 214.95 KB
Inchange Semiconductor
2SD2642

Overview

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) Complement to Type 2SB1687 Minimum Lot-to-Lot variations for robust device performance and reliable operation.