Datasheet Details
| Part number | 2SD311 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD311-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD311.
| Part number | 2SD311 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD311-InchangeSemiconductor.pdf |
|
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·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
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