2SD363 datasheet by Inchange Semiconductor.
| Part number | 2SD363 |
|---|---|
| Datasheet | 2SD363_InchangeSemiconductor.pdf |
| File Size | 212.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
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