Datasheet Details
| Part number | 2SD380 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.30 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD380_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD380 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.30 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD380_InchangeSemiconductor.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 7 A IBM Base Current-Peak PC Collector Power Dissipation @ TC≤75℃ TJ Junction Temperature 3.5 A 50 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD380 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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