2SD380 datasheet by Inchange Semiconductor.
| Part number | 2SD380 |
|---|---|
| Datasheet | 2SD380_InchangeSemiconductor.pdf |
| File Size | 202.30 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;.
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