Datasheet Details
| Part number | 2SD476N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.01 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD476N-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SD476N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.01 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD476N-InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC=2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD476N isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD476 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SD476 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD476 | Silicon NPN Transistor | Renesas |
|
2SD476A | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD476A | SILICON POWER TRANSISTOR | SavantIC |
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