Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC=2A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power switching...
