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2SD5075T

Manufacturer: Inchange Semiconductor

2SD5075T datasheet by Inchange Semiconductor.

2SD5075T datasheet preview

2SD5075T Datasheet Details

Part number 2SD5075T
Datasheet 2SD5075T_InchangeSemiconductor.pdf
File Size 59.16 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
2SD5075T page 2 2SD5075T page 3

2SD5075T Overview

MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V VBEsat IEBO Base-emitter saturation voltage IC=2.5A;IB=0.8A VEB=5V; IC=0 1.5 V Emitter cut-off current 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 ¦Ì A hFE DC current gain IC=1.5 A.

2SD5075T from other manufacturers

View 2SD5075T datasheet index

Brand Logo Part Number Description Other Manufacturers
Savantic Logo 2SD5075T Silicon NPN Power Transistors Savantic
INCHANGE Logo 2SD5075 NPN Transistor INCHANGE
Savantic Logo 2SD5075 Silicon NPN Power Transistors Savantic
Inchange Semiconductor logo - Manufacturer

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