High Current Capability
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
High Collector Power Dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high power audio amplifier applications.
Full PDF Text Transcription for 2SD557 (Reference)
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isc Silicon NPN Power Transistor 2SD557 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·High Collector Power Dissipatio...
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kdown Voltage- : V(BR)CEO= 140V(Min.) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
2SD557 Datasheet
