High Collector Current: IC= 7A
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 5A
Complement to Type 2SB708
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low-frequency power amplifiers and low-speed
sw
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isc Silicon NPN Power Transistor
2SD569
DESCRIPTION ·High Collector Current: IC= 7A ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type 2SB708 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
3.
2SD569 Datasheet
