2SD873 datasheet by Inchange Semiconductor.
| Part number | 2SD873 |
|---|---|
| Datasheet | 2SD873_InchangeSemiconductor.pdf |
| File Size | 204.04 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD873 | NPN Transistor | Toshiba |
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