2SJ126
DESCRIPTION
- Low Drain-Source ON Resistance
- High Forward Transfer Admittance
- Low Leakage Current
- Enhancement-Mode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High speed switching application
- Switching regulator ,DC-DC converter and Motor drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
-60
Gate-Source Voltage
±20
Drain Current-continuous@ TC=37℃
-10
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.1 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc P-Channel Mosfet...
