Datasheet Details
| Part number | 2SJ156 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.18 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet | 2SJ156-InchangeSemiconductor.pdf |
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Overview: isc P-Channel MOSFET Transistor INCHANGE Semiconductor 2SJ156.
| Part number | 2SJ156 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.18 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet | 2SJ156-InchangeSemiconductor.pdf |
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·Low Drain-Source ON Resisitance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -5 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel Mosfet Transistor INCHANGE Semiconductor 2SJ156 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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