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2SJ170 - P-Channel MOSFET Transistor

General Description

Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode

performance and reliable operation.

High speed switching application Switching regulator ,DC-DC conver

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isc P-Channel MOSFET Transistor INCHANGE Semiconductor 2SJ170 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -80 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -12 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max.