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2SJ221 - P-Channel MOSFET Transistor

General Description

Low On Resistance High Speed Switching Low Drive Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltag

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isc P-Channel MOSFET Transistor 2SJ221 DESCRIPTION ·Low On Resistance ·High Speed Switching ·Low Drive Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -20 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.