Datasheet Details
| Part number | 2SK1009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.32 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1009-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.32 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1009-InchangeSemiconductor.pdf |
|
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·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 7 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W 2SK1009 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS;
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