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2SK1019 - N-Channel MOSFET Transistor

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Description

Drain Current ID=35A@ TC=25℃ Drain Source Voltage- : VDSS=450V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VD

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Part number 2SK1019
Manufacturer Inchange Semiconductor
File Size 200.94 KB
Description N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor 2SK1019 DESCRIPTION ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 35 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.416 ℃/W Rth j-a Thermal Resistance,Junction to Ambient ℃/W isc website：www.iscsemi.
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