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isc N-Channel MOSFET Transistor
2SK1277
DESCRIPTION ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
250
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
30
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c
Thermal Resistance,Junction to Case
0.83 ℃/W
th j-a
Thermal Resistance,Junction to Ambient 35 ℃/W
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2SK1277 Datasheet
