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2SK1280 - N-Channel MOSFET Transistor

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Description

Drain Current ID= 18A@ TC=25℃ Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS

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Datasheet Details

Part number 2SK1280
Manufacturer Inchange Semiconductor
File Size 203.81 KB
Description N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT th j-c Thermal Resistance,Junction to Case 0.83 ℃/W th j-a Thermal Resistance,Junction to Ambient 35.
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