The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1320
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS=300V(Min)
APPLICATIONS ·high speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
300 ±20
V V
Drain Current-continuous@ TC=25℃ 8 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 35
℃/W ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.
2SK1320 Datasheet
