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2SK1512 - N-Channel MOSFET Transistor

General Description

Drain Current ID=10A@ TC=25℃ Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS

High voltage,high speed power switching.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1512 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS ·High voltage,high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNI T 900 V ±30 V 10 A 150 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0.83 ℃/W Thermal Resistance,Junction to Ambient 35 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.