2SK1512
DESCRIPTION
- Drain Current
- ID=10A@ TC=25℃
- Drain Source Voltage-
: VDSS=900 (Min)
APPLICATIONS
- High voltage,high speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI T
900 V
±30
10 A
150 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
0.83 ℃/W
Thermal Resistance,Junction to Ambient 35 ℃/W isc website：.iscsemi.cn
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1m A
VGS(th) Gate Threshold...
