2SK1601
DESCRIPTION
- Drain Current
- ID= 3A@ TC=25℃
- Drain Source Voltage-
: VDSS=900V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±30
Drain Current-continuous@ TC=25℃
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.125 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK1601 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor
- ELECTRICAL CHARACTERISTICS...
