2SK1629
isc N-Channel MOSFET Transistor
ESCRIPTION
- Drain Current
- ID=30A@ TC=25℃
- Drain Source Voltage-
: VDSS=500 (Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High current , high speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
Gate-Source Voltage
±30
Drain Current-continuous@ TC=25℃
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10m A
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1m...
