Datasheet Details
| Part number | 2SK1707 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.02 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1707-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor 2SK1707.
| Part number | 2SK1707 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.02 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1707-InchangeSemiconductor.pdf |
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·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS;
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