Datasheet Details
| Part number | 2SK1876 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.62 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1876-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1876 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.62 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1876-InchangeSemiconductor.pdf |
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·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Fast Switching Speed ·Low on-resistance ·For switchinggregulator,DC-DC Converter ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 75 ℃/W 2SK1876 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0;
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