Datasheet Details
| Part number | 2SK1985-01M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 48.34 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK1985-01M Download (PDF) |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | 2SK1985-01M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 48.34 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK1985-01M Download (PDF) |
|
|
|
·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2.5 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 2SK1985-01M SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=1mA 900 V VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1985-01MR | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
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2SK1985-01MR | Power MOSFET | VBsemi |
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