2SK2028-01M - N-Channel MOSFET Transistor

Description

Drain Current ID= 8A@ TC=25℃ Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2SK2028-01M
Manufacturer	Inchange Semiconductor
File Size	213.41 KB
Description	N-Channel MOSFET Transistor
Datasheet	2SK2028-01M Datasheet
Additional preview pages of the 2SK2028-01M datasheet.

📁 Similar Datasheet

2SK2028-01MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK2020-01MR - N-channel MOS-FET (Fuji Electric)
2SK2020-01MR - N-Channel MOSFET (INCHANGE)
2SK2021-01 - N-channel MOS-FET (Fuji Electric)
2SK2022-01M - N-channel MOS-FET (Fuji Electric)
2SK2022-01M - N-Channel 650V Power MOSFET (VBsemi)
2SK2023-01 - N-channel MOS-FET (Fuji Electric)
2SK2024-01 - Power MOSFET (Fuji Electric)
2SK2025-01 - N-channel MOS-FET (Fuji Electric)
2SK2026-01 - N-Channel Silicon Power MOSFET (Fuji)

Other Datasheets by Inchange Semiconductor

2SK2020-01 - N-Channel MOSFET Transistor
2SK2021-01 - N-Channel MOSFET Transistor
2SK2022-01M - N-Channel MOSFET Transistor
2SK2023-01 - N-Channel MOSFET Transistor
2SK2024-01 - N-Channel MOSFET Transistor
2SK2025-01 - N-Channel MOSFET Transistor
2SK2026-01 - N-Channel MOSFET Transistor
2SK2027-01 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ID(puls) Pulsed Drain Current 32 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.

Published: Jun 25, 2016 |