Datasheet Details
| Part number | 2SK2038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.35 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK2038-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | 2SK2038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.35 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK2038-InchangeSemiconductor.pdf |
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·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 800 ±30 5 V V A ID(puls) Pulsed drain current 15 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 50 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 2SK2038 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 10mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS=10V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK2038 | N-Channel MOSFET | Toshiba Semiconductor |
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