Datasheet4U Logo Datasheet4U.com

2SK2080-01 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 15A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2080-01R N-CHANNEL SILICON POWER MOS-FET Fuji Electric
2SK2080 N-Channel MOSFET INCHANGE
2SK208 Silicon N Channel Junction Type Field Effect Transistor Toshiba Semiconductor
2SK2081-01 N-channel MOS-FET Fuji Electric
2SK2082-01 N-channel MOS-FET Fuji Electric

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK2081-01 N-Channel MOSFET Transistor
2SK2082-01 N-Channel MOSFET Transistor
2SK2002-01M N-Channel MOSFET Transistor
2SK2003-01M N-Channel MOSFET Transistor
2SK2010 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK2080-01 DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC Converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 15 A ID(puls) Pulsed Drain Current 40 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.