Datasheet Details
| Part number | 2SK2350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.51 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK2350-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK2350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.51 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK2350-InchangeSemiconductor.pdf |
|
|
|
·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8.5 A ID(puls) Pulsed Drain Current 34 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.16 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 2SK2350 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK2350 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time CONDITIONS VGS= 0;
ID= 10mA VDS= 10V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK2350 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
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