Datasheet Details
| Part number | 2SK259 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.33 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK259-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK259 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.33 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK259-InchangeSemiconductor.pdf |
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·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK259 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK2590 | Silicon N-Channel MOSFET | Hitachi Semiconductor |
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2SK2590 | Silicon N-Channel MOSFET | Renesas |
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2SK2593 | Silicon N-Channel MOSFET | Panasonic Semiconductor |
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2SK2595 | Silicon N-Channel MOSFET | Renesas Technology |
|
2SK2595 | Silicon N-Channel MOSFET | Hitachi Semiconductor |
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