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isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed switching. ·Suitable for switchingregulator, DC–DC control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.
2SK349 Datasheet
