Datasheet4U Logo Datasheet4U.com

2SK351 - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 5A@ TC=25℃.
  • Drain Source Voltage : VDSS= 800V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK351 Silicon N-Channel MOSFET Hitachi
2SK3510 N-Channel Power MOSFET Renesas
2SK3510 MOS Field Effect Transistor Kexin
2SK3511 MOSFET Kexin
2SK3511 MOSFET Renesas

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK350 N-Channel MOSFET Transistor
2SK3501 N-Channel MOSFET Transistor
2SK3528-01R N-Channel MOSFET Transistor
2SK3529-01 N-Channel MOSFET Transistor
2SK3531-01 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK351 FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 125 W TJ Max.