Datasheet4U Logo Datasheet4U.com

2SK3555-01MR - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 25A@ TC=25℃.
  • Drain Source Voltage : VDSS= 250V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3555-01MR N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK355 N-Channel Transistor Toshiba
2SK3550-01R Power MOSFET Fuji Electric
2SK3554-01 N-Channel MOSFET Fuji Electric
2SK3556-01L N-CHANNEL SILICON POWER MOSFET Fuji Electric

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK3550-01R N-Channel MOSFET Transistor
2SK3554-01 N-Channel MOSFET Transistor
2SK3556-01L N-Channel MOSFET Transistor
2SK3556-01S N-Channel MOSFET Transistor
2SK350 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK3555-01MR FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Pluse 100 A PD Total Dissipation @TC=25℃ 70 W TJ Max.