Datasheet4U Logo Datasheet4U.com

2SK3563 - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 5A@ TC=25℃.
  • Drain Source Voltage : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3563 N-Channel MOSFET Toshiba Semiconductor
2SK356 N-Channel Transistor Toshiba
2SK3560 N-Channel MOSFET Panasonic Semiconductor
2SK3560 Silicon N-channel power MOSFET Kexin
2SK3561 Silicon N-Channel MOSFET Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK3561 N-Channel MOSFET Transistor
2SK3562 N-Channel MOSFET Transistor
2SK3567 N-Channel MOSFET Transistor
2SK350 N-Channel MOSFET Transistor
2SK3501 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK3563 FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 20 A PD Total Dissipation @TC=25℃ 35 W TJ Max.