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2SK357 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID= 5A@ TC=25℃ Drain Source Voltage- : VDSS= 150V(Min) Fast Switching Speed APPLICATIONS

High speed power switching applications.

High Drain Current.

High forward transfer admittance

Low leakage Current.

Low Drain-Source on resistance

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Datasheet preview – 2SK357

Datasheet Details

Part number 2SK357
Manufacturer Inchange Semiconductor
File Size 60.36 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK357 Datasheet
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Full PDF Text Transcription

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK357 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power switching applications. ·High Drain Current. ·High forward transfer admittance ·Low leakage Current. ·Low Drain-Source on resistance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 5 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.
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