2SK357
DESCRIPTION
- Drain Current
- ID= 5A@ TC=25℃
- Drain Source Voltage-
: VDSS= 150V(Min)
- Fast Switching Speed
APPLICATIONS
- High speed power switching applications.
- High Drain Current.
- High forward transfer admittance
- Low leakage Current.
- Low Drain-Source on resistance
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
150 V
Gate-Source Voltage
±20
Drain Current-continuous@ TC=25℃ 5 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
℃
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10m A
VGS(th) Gate Threshold Voltage
VDS= 10VGS; ID=1m A
RDS(on) Drain-Source On-stage Resistance VGS=10V;...
