Full PDF Text Transcription for 2SK3581L (Reference)
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2SK3581L. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor 2SK3581L FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = ...
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tage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.46Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pluse 64 A PD Total Dissipation @TC=25℃ 225 W TJ Max.
2SK3581L Datasheet
