Datasheet4U Logo Datasheet4U.com

2SK3874-01R - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 56A@ TC=25℃.
  • Drain Source Voltage : VDSS= 280V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 61mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3874-01R N-CHANNEL SILICON POWER MOSFET Fuji
2SK387 N-Channel Transistor Toshiba
2SK3870-01 N-CHANNEL SILICON POWER MOSFET Fuji
2SK3872-01L N-CHANNEL SILICON POWER MOSFET Fuji
2SK3872-01S N-CHANNEL SILICON POWER MOSFET Fuji

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK387 N-Channel MOSFET Transistor
2SK3870 N-Channel MOSFET Transistor
2SK3872-01L N-Channel MOSFET Transistor
2SK3872-01S N-Channel MOSFET Transistor
2SK3873-01 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK3874-01R FEATURES ·Drain Current : ID= 56A@ TC=25℃ ·Drain Source Voltage : VDSS= 280V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 61mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 280 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pluse 224 A PD Total Dissipation @TC=25℃ 210 W TJ Max.