Datasheet4U Logo Datasheet4U.com

2SK3899-ZK - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 84A@ TC=25℃.
  • Drain Source Voltage : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3899 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK3899 MOS Field Effect Transistor Kexin
2SK389 N-Channel MOSFET Toshiba Semiconductor
2SK3891-01R Power MOSFET Fuji Semiconductors
2SK3892 Silicon N-channel power MOSFET Panasonic

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK3891-01R N-Channel MOSFET Transistor
2SK3892 N-Channel MOSFET Transistor
2SK3804-01S N-Channel MOSFET Transistor
2SK3811-ZP N-Channel MOSFET Transistor
2SK3812-ZP N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK3899-ZK FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 84 A IDM Drain Current-Single Pluse 336 A PD Total Dissipation @TC=25℃ 146 W TJ Max.