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2SK413 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID= 8A@ TC=25℃ Drain Source Voltage- : VDSS= 140V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High speed switching.

High Cutoff frequency.

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Datasheet Details

Part number 2SK413
Manufacturer Inchange Semiconductor
File Size 229.14 KB
Description N-Channel MOSFET Transistor
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 140V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching. ·High Cutoff frequency. ·No secondary breakdown. ·Suitable for switching regulator，DC-DC converter, PWM amplifiers，and ultrasonic power oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 140 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK413 isc website：www.iscsemi.
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