Datasheet4U Logo Datasheet4U.com

2SK416S - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 2.0A@ TC=25℃.
  • Drain Source Voltage : VDSS= 40V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 15V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK416 N-Channel MOSFET Hitachi Semiconductor
2SK4161D N-Channel MOSFET INCHANGE
2SK4161D N-Channel MOSFET Sanken
2SK4164 N-Channel Silicon MOSFET Sanyo Semicon Device
2SK410 N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK416L N-Channel MOSFET Transistor
2SK4100LS N-Channel MOSFET Transistor
2SK4101LS N-Channel MOSFET Transistor
2SK4108 N-Channel MOSFET Transistor
2SK4116LS N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK416S FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 15V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 4.0 A PD Total Dissipation @TC=25℃ 10 W TJ Max.