Datasheet4U Logo Datasheet4U.com

2SK4197LS - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 3.5A@ TC=25℃.
  • Drain Source Voltage : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3.25Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4197LS N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4197FG N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4197FS N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4197FS N-Channel Power MOSFET ON Semiconductor
2SK419 Silicon N-Channel MOSFET Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK4191LS N-Channel MOSFET Transistor
2SK4192LS N-Channel MOSFET Transistor
2SK4193LS N-Channel MOSFET Transistor
2SK4194LS N-Channel MOSFET Transistor
2SK4195LS N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK4197LS FEATURES ·Drain Current : ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.25Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.5 A IDM Drain Current-Single Pluse 13 A PD Total Dissipation @TC=25℃ 28 W TJ Max.