Datasheet Details
| Part number | 2SK429 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.80 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK429-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK429 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.80 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK429-InchangeSemiconductor.pdf |
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·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Hhigh speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A PD Power Dissipation@TC=25℃ 20 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK429 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK429 | N-Channel MOSFET | Hitachi Semiconductor |
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