Datasheet Details
| Part number | 2SK556 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.66 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK556-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor 2SK556.
| Part number | 2SK556 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.66 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK556-InchangeSemiconductor.pdf |
|
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·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 12 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK556 | Silicon N-Channel MOSFET | Renesas |
| Part Number | Description |
|---|---|
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