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2SK562 - N-Channel MOSFET Transistor

General Description

High speed power Switching.

Max.

Key Features

  • Drain Current.
  • ID=39A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 50V(Min).
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor 2SK562 FEATURES ·Drain Current –ID=39A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·High speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 39 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.