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isc N-Channel MOSFET Transistor
2SK579L
FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
450
V
VGS
Gate-Source Voltage-Continuous
±15
V
ID
Drain Current-Continuous
1.5
A
IDM
Drain Current-Single Pluse
6.0
A
PD
Total Dissipation @TC=25℃
20
W
TJ
Max.
2SK579L Datasheet
