2SK602
FEATURES
- Drain Current
- ID=1A@ TC=25℃
- Drain Source Voltage-
: VDSS= 800V(Min)
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
- Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
±20
℃
-55~150 ℃
2SK602 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1m A
VGS(th) Gate Threshold...
