Datasheet Details
| Part number | 2SK672 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.17 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK672-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | 2SK672 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.17 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK672-InchangeSemiconductor.pdf |
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·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high Current, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 60 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 10 A Total Dissipation@TC=25℃ 40 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 3.12 Thermal Resistance,Junction to Ambient 83.3 ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK672 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
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